The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 1980
Filed:
Aug. 28, 1978
John E Davies, San Francisco, CA (US);
Guido Galli, Saratoga, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming an improved liquid phase epitaxial film on a wafer. The resultant film has improved uniformity of magnetic properties, such as the collapse field (H.sub.o), across the surface of the wafer as well as being substantially free of mesa defects on the surface. The method includes the step of growing the liquid phase epitaxial film while the wafer is in the horizontal plane. The wafer is removed from the melt while the wafer is tilted at an angle from the horizontal plane so that the melt may drain from the wafer. Then the wafer is positioned in a horizontal plane again and rotated to remove the remaining melt droplets from the edge of the wafer. In a preferred embodiment, a plurality of wafers are positioned in a wafer holding means so that the wafers are arranged in a stacked manner having substantially the same space between adjacent wafers. Wafers may also be stacked in pairs that are back-to-back while carrying out this method.