The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1980
Filed:
Mar. 08, 1978
John A Copeland, III, Fair Haven, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
An input voltage overload protection semiconductor structure useful with MOS circuitry consists of a p-region in an n-substrate with p+ type regions formed on both sides of the p-region and an n+ type region centrally located in the p-region. Input signals are applied to the first p+ region. The gate of an MOS structure to be protected from voltage overload is connected to the second p+ type region. A power supply used with the MOS structure is connected to the n+ region. This structure provides significantly greater load protection than the standard resistor-diode-resistor circuit.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile