The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 1980

Filed:

Jul. 11, 1977
Applicant:
Inventors:

Masaru Asano, Tokyo, JP;

Tetsushi Sakai, Sayama, JP;

Yoshio Sunohara, Kodaira, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29579 ; 29591 ; 357 59 ;
Abstract

The semiconductor device comprises a semiconductor substrate, a polycrystalline silicon semiconductor body extending upwardly from a portion of the surface of the semiconductor substrate and containing an impurity at a substantially uniform concentration, and a metal electrode disposed on the top surface of the polycrystalline silicon semiconductor body. The metal electrode extends in the lateral direction beyond the periphery of the top surface of the polycrystalline silicon semiconductor body.


Find Patent Forward Citations

Asano, Masaru. (1980). Semiconductor devices and method of manufacturing the same (U.S. Patent No. 4188707). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4188707

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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