The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 1980
Filed:
Mar. 08, 1978
Etsuo Mizukami, Tenri, JP;
Hiroshi Kishishita, Nara, JP;
Masashi Kawaguchi, Nara, JP;
Yoshihiro Endo, Osaka, JP;
Kinichi Isaka, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas. A dielectric layer is further provided for establishing high reliabiltiy high dielectric properties of the electroluminescence display panel, the dielectric layer being disposed together with the silicon-oxynitride film and being one of the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, Ta.sub.2 O.sub.5, Si.sub.3 N.sub.4 and Y.sub.2 O.sub.3. The silicon-oxynitride flm which is injected by suitable ions such as P.sup.+, H.sup.+, He.sup.+, Ne.sup.+, or Ar.sup.+ may be further provided as the dielectric layer.