The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1980
Filed:
Nov. 04, 1977
Applicant:
Inventors:
Yutaka Tomisawa, Yokohama, JP;
Tatsuro Mitani, Kawasaki, JP;
Assignee:
Tokyo Shibaura Electric Co., Ltd., Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 55 ; 357 59 ; 357 68 ; 357 71 ;
Abstract
A junction type field effect transistor comprising a semiconductor substrate; semiconductor regions formed in the semiconductor substrate and exposed on a major surface thereof, the semiconductor regions including a gate region and an isolation region; and a polycrystalline semiconductor layer formed on the surface of the gate region or on the surfaces of the gate region and the isolation region. The polycrystalline semiconductor layer contains an impurity of the same conductivity type as the gate and the isolation regions.