The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1980
Filed:
Jan. 30, 1978
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B / ; H03B / ;
U.S. Cl.
CPC ...
3311 / ; 331 99 ; 331176 ;
Abstract
An SHF band oscillation circuit using a field effect transistor (FET) having a feedback path between gate and drain or source and a resonator connected to the gate. Impedances connected to the respective terminals of the FET comprise microstrip lines. A gate bias circuit includes a temperature-sensitive semiconductor device so that a gate bias is changed with the change in ambient temperature. In this manner, the change of oscillation frequency which would otherwise occur by the change of the ambient temperature is compensated. The resonator connected to the gate comprises a dielectric resonator to further stabilize the oscillation frequency.