The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1980
Filed:
Jun. 10, 1977
Applicant:
Inventors:
John C Brice, Salfords near Redill, GB;
Owen F Hill, Salfords near Redill, GB;
Ronald G Pratt, Salfords near Redill, GB;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ; C01G / ;
U.S. Cl.
CPC ...
156600 ; 1566 / ; 156624 ; 156D / ; 423326 ; 422249 ;
Abstract
Method of growing single crystal of bismuth silicon oxide from a melt of Bi.sub.x Si O.sub.1.5x+2, in an oxygen containing atmosphere. At the start of crystallization, x has a value of 11.55 to 11.82 or 12.35 to 14.00. The value of x does not have a spread of more than 0.025 throughout the crystal.