The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1980
Filed:
Jul. 28, 1978
Applicant:
Inventors:
Fred J Radd, Ponca City, OK (US);
Don H Oertle, Ponca City, OK (US);
Charles N McKinney, Ponca City, OK (US);
Assignee:
Conoco, Inc., Ponca City, OK (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 136 / ; 148174 ; 148175 ; 357 91 ; 427 86 ;
Abstract
A method of grain-orienting the crystal structure of a layer of semiconductor material by application of a raster scanning electron beam to a layer of polycrystalline semiconductor material which has been previously formed on a substrate, such as by sputter-plasma film deposition. The method comprises electron beam lithography computer-applied to the crystal growth and orientation of a polycrystalline thin sheet of silicon or other semiconductor material.