The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1980
Filed:
Jul. 31, 1978
Daniel Delagebeaudeuf, Paris, FR;
Thomas Pearsall, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
An avalanche diode comprising a semiconducting heterojunction (Ga.sub.x In.sub.1-x As/InP) intended to oscillate as an 'IMPATT' diode. It comprises a substrate of n.sup.+ doped monocrystalline InP supporting a series of three layers which are formed by epitaxy and of which the monocrystalline latices match one another namely an InP layer with n-type doping and two layers of Ga.sub.x In.sub.1-x As (best mode: Ga.sub.0.47 In.sub.0.53 As) with n-type and p.sup.+ -type doping respectively, these two layers being of minimal thickness. When a backward bias is applied to the p.sup.+ n-junction, the avalanche phenomenon takes place in the thin n-type layer of ternary alloy.