The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1980
Filed:
Jul. 19, 1978
Applicant:
Inventor:
Graham S Tubbs, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365203 ; 365154 ; 365222 ; 307238 ;
Abstract
An MOS memory cell of the pseudo static type employs a pair of cross-coupled driver transistors forming a bistable circuit, with load resistors replaced by a pair of series transistors connecting storage nodes to a supply voltage. The storage nodes are connected to complimentary data lines by a pair of coupling transistors controlled by a word address. The series transistors are turned on in sequence, for refresh, so an intermediate node is charged during a first phase and discharged into the storage nodes during the second phase. The series transistors are not used for read or write operations.