The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 1980

Filed:

Jul. 05, 1978
Applicant:
Inventor:

Morton B Panish, Springfield, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ;
U.S. Cl.
CPC ...
357 18 ; 357 17 ; 357 16 ; 331 / ;
Abstract

A semiconductor double heterostructure (DH) laser or spontaneous emitting diode is described which emits radiation in the infrared region of the spectrum from about 3.5 to 5.5 micrometers. The DH structure comprises a Group III-V lattice-matched system, in particular, Al.sub.y Ga.sub.1-y Sb--InAs.sub.x Sb.sub.1-x where 0.ltoreq.y.gtoreq.1 and 0.82.ltoreq..times..ltoreq.0.91, approximately.


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