The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1980
Filed:
Mar. 13, 1978
Applicant:
Inventor:
Huw D Rees, Malvern, GB;
Assignee:
National Research Development Corporation, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357-4 ; 357 23 ;
Abstract
A field effect transistor for operation at temperatures below 150.degree. K. is capable of operating at low voltage and current levels at high speed. The transistor is fabricated by deposition of metal source drain and gate electrodes upon a layer of semi-conductor having a concentration of free carriers less than 10.sup.16 cm.sup.-3 formed on a substrate having a resistivity greater than 10.sup.4 ohm-cm.