The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1980
Filed:
Aug. 16, 1977
Hans Pfleiderer, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A semiconductor device is disclosed in which an intrinsic or weakly doped semiconductor layer is arranged on a substrate. The semiconductor layer contains a first P doped zone and a first N doped zone which are separated by a portion of the said intrinsic layer serving as base zone. The semiconductor layer further contains a second P doped zone and a second N doped zone which are also separated from one another by the base zone. The four doped zones are arranged such that a connecting line between the second P doped zone and second N doped zone intersects a connecting line between the first P doped zone and the first N doped zone preferably at right angles. A sub-diode formed of the first doped zones affects the operation of a sub-diode formed by the second doped zones.