The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1980
Filed:
Jun. 22, 1978
Howard McKinzie, Framingham, MA (US);
Elizabeth A Trickett, Acton, MA (US);
GTE Laboratories Incorporated, Waltham, MA (US);
Abstract
A method of preparing doped or modified polycrystalline p- or n-type titanium dioxide semiconductor electrodes utilizable in photoassisted oxidation reactions or photoelectrochemical cells is provided. The method comprises the steps of (1) applying to a titanium substrate a thin film of one or more oxide of metals selected from the group consisting of aluminum and the d-electron transition metals other than titanium, and (2) heating the coated titanium body in an oxygen-containing atmosphere at an elevated temperature, preferably below about 800.degree. C., to sinter the coating to the titanium substrate. The sintering step produces on the titanium substrate a thin photoactive film of titanium dioxide containing a uniform concentration gradient of the previously-applied modifying oxide.