The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1980
Filed:
May. 24, 1978
Applicant:
Inventors:
Thomas C Hall, Irvine, CA (US);
John W Peters, Malibu, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ; B05D / ;
U.S. Cl.
CPC ...
427 531 ; 427 541 ; 427 94 ; 4272 / ; 423344 ; 423406 ;
Abstract
Low temperature photonitride (LTPN) films of excellent quality have been prepared at temperatures ranging from 300.degree. C. downward to 100.degree. C. by a photochemical vapor deposition process, wherein a mixture of silane, ammonia, and hydrazine is caused to react to form Si.sub.3 N.sub.4 films at the substrate interface. These films are suitable for the preparation of silicon nitride passivation layers on solid-state devices, such as metal-oxide semiconductors (MOS) and charge coupled devices to impart enhanced reliability.