The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1979
Filed:
Dec. 30, 1977
Applicant:
Inventors:
Bai-Cwo Feng, Wappingers Falls, NY (US);
George C Feng, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; G03C / ;
U.S. Cl.
CPC ...
430270 ; 427 96 ; 4274 / ; 430296 ; 430325 ;
Abstract
A resist mask comprising two layers of resist, one of which is saturated with a dilutant which does not dissolve the other. In one embodiment, the two layers of resist are applied upon a substrate, the first layer of which is more soluble in a developer. The second layer is said saturated resist and the first layer is non-saturated. This composite is preferaly used to form a relief mask with recessed sidewalls used in lift-off processes.
Feng, Bai-Cwo. (1979). Two layer resist system (U.S. Patent No. 4180604). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4180604
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile