The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1979
Filed:
Apr. 10, 1978
Applicant:
Inventors:
Sidney Marshall, Monmouth County, NJ (US);
Robert J Zeto, Monmouth County, NJ (US);
Assignee:
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29578 ; 29590 ; 148-15 ; 2041 / ;
Abstract
An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800.degree. C. to 825.degree. C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.