The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 1979
Filed:
Apr. 25, 1978
Aristos Christou, Springfield, VA (US);
Howard M Day, Hillcrest Heights, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method for constructing systems of refractory layers for use in making gallium arsenide (GaAs) semiconductor devices, having gold as the conducting electrode, which devices are thermally stable when thermally stressed up to about 600.degree. C. for approximately 24 hours. The method forms refractory layers of either tantalum-platinum-tantalum, or tungsten-platinum-tungsten, or titanium tungsten-platinum to develop both the Schottky barrier to GaAs and the diffusion barrier between gold and GaAs. Each of the refractories are individually deposited, at specific temperatures in the range of 50.degree. C. to 175.degree. C., on a GaAs wafer within a vacuum. The metalized wafer cools to room temperature and is removed from the vacuum. Contacts are then typically defined on the wafer and the wafer is subsequently bonded.