The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 1979

Filed:

Feb. 26, 1979
Applicant:
Inventor:

Subodh K Das, Apollo, PA (US);

Assignee:

Aluminum Company of America, Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B / ; C25C / ; C25C / ;
U.S. Cl.
CPC ...
204 67 ; 2042 / ; 204244 ; 204247 ; 204294 ;
Abstract

Metal such as aluminum is produced electrolytically from metal chlorides or other halides dissolved in a molten solvent bath of higher decomposition potential in a cell including one or more graphite cathode surfaces spaced from opposed anodes, particularly a bipolar cell, with bath flow through the spaces between the anodes and cathodes. The wetting characteristics of the carbonaceous cathode with respect to the metal deposited there by electrolysis are selectively balanced with the bath flow over the cathode and with the anode-to-cathode distance. Cathode surface wear rate is substantially reduced if the surface is wettable by the metal in regions of low bath flow velocity or regions of greater anode-cathode distance. The wear rate is also reduced by using non-wettable cathode surfaces in regions of higher bath flow velocity or regions of closer anode-cathode distance. Conditions of graphite manufacture, including raw material selection and graphitization temperature, are specified to achieve controlled wettability of graphite electrodes to enable the selective production of either condition for the particular cell operation involved.


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