The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1979
Filed:
May. 03, 1977
Shigeru Hokuyo, Itami, JP;
Hiroshi Gamo, Itami, JP;
Abstract
The stabilization of electrical switching parameters in a semiconductor switching device is achieved by selectively doping a portion of semiconductor material with a heavy metal and irradiating the remaining semiconductor material. In an important embodiment of the invention, a center-fired four region semiconductor switching device consisting of silicon semiconductor material is prepared by gold doping the silicon in the area around the center firing gate contact where initial conduction of current is concentrated. The remainder of the active area of the device is irradiated to provide recombination centers for fast switching without the adverse effect on blocking leakage current that is attributable to indiscriminate gold doping. The gold provides recombination centers in the initial conductive area which are not subject to annealing as are the recombination centers provided by irradiation.