The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1979
Filed:
Dec. 27, 1977
Arthur M Cappon, Boston, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A logic gate having a first depletion mode field effect transistor with a gate electrode adapted for coupling to a control signal source, a second depletion mode field effect transistor and an enhancement mode field effect transistor, such enhancement mode field effect transistor being serially connected to the second depletion mode transistor. The second depletion mode transistor and the enhancement field effect transistor are fed by the first depletion mode transistor. One of such serially connected transistors has a Schottky gate contact. With such arrangement the logic gate includes a 'complementary' pair of relatively short channel length devices fed by a relatively short channel length device to provide low static power dissipation and large output capacitance drive capability.