The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1979
Filed:
Jun. 09, 1978
Silvanus S Lau, Pasadena, CA (US);
James W Mayer, Pasadena, CA (US);
Thomas W Sigmon, Corvallis, OR (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
A method is provided for producing a low-defect layer of silicon on a sapphire substrate. A silicon-on-sapphire (SOS) wafer is formed by initially epitaxially depositing silicon on the sapphire substrate to form a monocrystalline layer which is substantially free of lattice defects near its surface, but which exhibits a high defect density near the sapphire substrate. The wafer is subsequently subjected to an ion implantation to form an amorphous region in the silicon near the silicon-sapphire interface. The implanted ions are preferably 'channeled' through the silicon layer to insure that the amorphous region will be localized in the imperfect region near the substrate, leaving the upper region of the silicon layer undamaged. During a subsequent high temperature anneal cycle, monocrystalline silicon is regrown from the residual upper regions of the silicon down to the silicon-sapphire interface, producing a silicon layer having a greatly reduced defect density throughout the layer.