The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1979
Filed:
Jan. 24, 1978
Daniel Delagebeaudeuf, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
An avalanche diode of the IMPact Avalanche Transit Time (IMPATT) type with heterojunction structure of two different semiconductor materials, wherein a semiconductor junction P/N or N/P is located at the interface of the two materials. In order to improve the efficiency of the diode functioning as an oscillator, the impurity concentrations of the semiconductors are chosen so that the avalanche zone is located in one and only one of the materials, the thickness of the materials being determined in conjunction with the impurity concentrations to have transit zones of equal length, thus producing a 'double drift' avalanche zone. In the case of Ge/Ga As the condition to be fulfilled by the impurity concentration K.sub.1 of Ge and the impurity concentration K.sub.2 of Ga AS is very simple:
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile