The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1979
Filed:
Dec. 02, 1976
Applicant:
Inventor:
Makoto Inoue, Yokohama, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 82 ; 148 / ; 148 63 ; 357 52 ; 423624 ; 423617 ; 423593 ; 427 87 ; 427435 ; 4274 / ;
Abstract
A method of manufacturing an oxide layer of semiconductor composition is disclosed. On the surface portion of semiconductor substrate, an oxide layer is formed by oxidizing it in heated water containing oxygen gas, such, for example, as ozone. One preferred method is to bubble the ozone through hot water which contains near saturated steam at the temperature of the water.