The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 1979

Filed:

Mar. 06, 1978
Applicant:
Inventors:

Masanori Tanabe, Hitachi, JP;

Satoshi Shimada, Hitachi, JP;

Motohisa Nishihara, Katsuta, JP;

Kazuji Yamada, Hitachi, JP;

Yasumasa Matsuda, Hitachi, JP;

Michitaka Shimazoe, Hitachi, JP;

Yoshitaka Matsuoka, Mito, JP;

Yukio Takahashi, Katsuta, JP;

Katsuya Katohgi, Katsuta, JP;

Mitsuo Ai, Katsuta, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
73727 ; 73721 ; 73777 ; 338-4 ; 338 42 ;
Abstract

A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.


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