The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1979
Filed:
Dec. 07, 1978
Applicant:
Inventors:
Harvey E Cline, Schenectady, NY (US);
Douglas E Houston, Ballston Lake, NY (US);
Thomas R Anthony, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148177 ; 148187 ;
Abstract
A thin opaque layer of material is deposited on one or both major opposed surfaces of a semiconductor wafer to enhance establishing a thermal gradient near the major surface or surfaces to produce straight, fine molten wires (<0.002') of a metal by migration of a melt of the metal through a solid, or matrix, both of semiconductor material by thermal gradient zone melting processing along a thermal gradient established and maintained aligned substantially parallel with a preferred crystal axis of migration by thermal gradient zone melting processing.