The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1979
Filed:
Mar. 30, 1978
Hartmut Runge, Kirchseeon, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A light emitting semiconductor component in which a semiconductor substrate of a first conductivity type has a zone of a second conductivity type formed therein immediately below a portion of a planar surface thereof. An insulating layer covers the planar surface but has a window through the insulating layer above most of the zone of the second conductivity type. A layer of Zn.sub.2 SiO.sub.4 doped with a luminous phosphor lies on the planar substrate surface within this window without contact with the walls of the window opening. Three metal electrodes are formed, one on the portion of the Zn.sub.2 SiO.sub.4 layer, one on the substrate surface above a marginal portion of the doped zone, and one on the substrate spaced from the doped zone. The Zn.sub.2 O.sub.4 layer is preferably doped with Mn ions in a concentration of between 5.multidot.10.sup.16 and 5.multidot.10.sup.19 cm.sup.-3. The depth of the zone is less than 1000 nm. One preferred doping for the zone of the second conductivity type is a doping of boron in a concentration of between 5.multidot.10.sup.18 and 5.multidot.10.sup.19 ions cm.sup.-3. A process for the production of the component is disclosed, and a process for the operation of the component is disclosed.