The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1979
Filed:
Jun. 16, 1978
Siegfried Kalbitzer, Heidelberg, DE;
Gerhard Muller, Heidelberg, DE;
Walter E Spear, Dundee, GB;
Peter G Le Comber, Dundee, GB;
Max-Planck-Gesellschaft zur Forderung der Wissenschafter e.V., Gottingen, DE;
Abstract
To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20.degree. C. and below the recrystallization temperature, for example in the range of between 100.degree. C., preferably above 200.degree.-250.degree. C. and below about 450.degree. C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.