The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1979
Filed:
Feb. 23, 1977
Applicant:
Inventors:
Kenichi Ohba, Kokubunji, JP;
Kazutaka Narita, Kodaira, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 42 ; 357 52 ; 357 54 ; 357 86 ;
Abstract
A MIS capacitance element formed in a semiconductor substrate of p-(or n-) conductivity type comprises an n- (or p-) type well region formed in one principal surface of the semiconductor substrate and a polycrystalline region formed on the surface of the well region through a gate insulator layer. A polar voltage is applied between the well region and the polycrystalline layer so that the well region is forward biased and no carrier channel region is formed in the surface of the well region. The MIS element is particularly suited for use in a complementary MIS IC and provides almost no voltage or field dependency of the capacitance.