The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 1979

Filed:

Nov. 06, 1978
Applicant:
Inventors:

David A Collins, San Diego, CA (US);

Derek L Lile, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25F / ; C25F / ;
U.S. Cl.
CPC ...
2041293 ;
Abstract

A method for the thinning and automatic leveling of layers of a semicondur for use in device fabrication applications. The method is to be employed with anodic thinning wherein a conducting semiconductor layer on a high resistivity substrate is placed in a suitable electrolyte and voltage is applied so that the sample is made positive with respect to a cathode, also immersed in the electrolyte. The instant method is directed to the anodic thinning of irregularities in the semiconductor by slowly immersing the semiconductor into the electrolyte such that the location of irregularities can be determined and processed by monitoring the anodic process.


Find Patent Forward Citations

Collins, David. (1979). Method of anodically leveling semiconductor layers (U.S. Patent No. 4166782). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4166782

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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