Process for making a semiconductor component with electrical contacts

Abstract

A semiconductor component with electric contacts is formed which includes a semiconductor body having metal contact layers formed in ohmic contact with at least two side surfaces thereof. In the process of making the component, a layer sequence is made including two layers formed of thermoplastic material and an intermediate layer of conductive material sandwiched between the two thermoplastic layers. In the process the temperature of the semiconductor body is raised to soften the thermoplastic material and the semiconductor body with its metal contacts is pressed through one of the thermoplastic layers, through the intermediate conductive layer to rupture the same and divide it into two parts and partially into the other thermoplastic layer. The intermediate layer is now composed of two parts, each part being conductively in contact with one of the metal contacts on the side surfaces of the semiconductor body. By forcing the semiconductor body and the leads through one of the thermoplastic layers into a desired position in the other thermoplastic layer, the first thermoplastic layer referred to, when cooled, partially extends upwardly against the respective faces of the semiconductor body to firmly grip these parts in place against the other thermoplastic layer. Furthermore, the metal contacts on the semiconductor body become fused to the two parts respectively of the intermediate conductive layer. Lead wires to the intermediate conductive parts are provided by pressing them through the first mentioned thermoplastic layer into contact with the intermediate conductive parts and fused therewith.