The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1979
Filed:
Nov. 10, 1976
Applicant:
Inventor:
Aloysious F Tasch, Jr, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 41 ; 357 24 ; 357 91 ; 365149 ; 365178 ; 365186 ;
Abstract
Disclosed is a memory system capable of being integrated into a semiconductor substrate and having an array of Hi-C memory cells. The Hi-C cells are selectively addressable by row and column lines. Each cell of the array is comprised of a transistor having a source coupled to a bit line, a gate coupled to a word line, and a drain coupled to a node N. Node N is coupled in parallel to a dielectric capacitor and to a depletion capacitor. The dielectric capacitor and the depletion capacitor are constructed to have substantially the same charge capacity.