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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4163239 B1

PDFFull Text
Date of Patent:
Jul. 31, 1979

Filed:

Jan. 03, 1977

Second level phase lines for ccd line imager

Applicant:
Inventor:

David L Carter, Upper Montclair, NJ (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Sharp; Melvin

Donaldson; Richard L.

Hiller; William E.

Primary Examiner:

William D Larkins

Int. Cl.
CPC ...
H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 24 ; 3072 / ; 357 30 ; 357 71 ;
Abstract

Disclosed is an improved charge coupled optical imager and method of fabrication which includes a multilayer metallization system for addressing respective rows of the imager and for applying multiphase clocks to the respective electrodes of the charge coupled devices. The imager requires only two clock sources and substantially reduces the required semiconductor surface area required for a resolution element. In a preferred embodiment, anodized aluminum is used as the insulation separating the first and second levels of metallization.

Find Patent Forward Citations

Carter, David. (1979). Second level phase lines for ccd line imager (U.S. Patent No. 4163239). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4163239

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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