The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 1979
Filed:
Nov. 14, 1977
Lucian A D'Asaro, Madison, NJ (US);
Yutaka Okinaka, Madison, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
A process is described for making III-V semiconductor devices with electroless gold plated layers. Various III-V semiconductors are used, particularly those containing gallium, aluminum and indium such as GaAs, Al.sub.x Ga.sub.1-x As, GaP, Al.sub.x Ga.sub.1-x P.sub.y As.sub.1-y, In.sub.x Ga.sub.1-x P.sub.y As.sub.1-y and InP. This process involves activation of a semiconductor surface and then electrolessly gold plating the surface. Electroless gold films produced in accordance with this process have good adherence to the semiconductor surface and are useful not only for electrical connection to the semiconductor, but also for attachment to headers for mechanical convenience and to maintain temperature stability. Exemplary devices are field effect transistors, particularly those operating in the microwave region, and semiconductor lasers.