The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1979
Filed:
Feb. 21, 1978
Hiroto Kawagoe, Kodaira, JP;
Kosei Nomiya, Tokyo, JP;
Hitachi, Ltd., , JP;
Abstract
An input circuit has at least an enhancement type first MISFET incorporated between an input terminal and a power supply terminal for the input circuit. A gate electrode of the first MISFET is connected to the power supply terminal, and at least a second MISFET is incorporated between the input terminal and a gate electrode of a third MISFET constituting the input circuit. A gate electrode of the second MISFET is connected to the power supply terminal, whereby the dielectric breakdown of the gate of the third MISFET is prevented.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile