The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1979
Filed:
May. 23, 1978
Applicant:
Inventors:
Assignee:
Futaba Denshi Kogyo K. K., Chiba, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ;
U.S. Cl.
CPC ...
148175 ; 136 / ; 148-15 ; 148174 ; 2041 / ; 2041 / ; 2041 / ; 427 39 ; 427 42 ;
Abstract
A p-n junction type solid-state element having at least a pair of p-n junction type semiconductor layers formed of a p-type semiconductor and an n-type semiconductor joined with each other and a method of producing the same, in which the p-type semiconductor and n-type semiconductor are formed and joined by forming at least one of the semiconductors using what is called the ionized-cluster-beam deposition process which evaporates a material to be deposited to form a vapor, injects the vapor into a vacuum region to form clusters of atoms, ionizes the clusters and electrically accelerates ionized clusters onto a substrate thereby forming a layer thereon.