The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 1979
Filed:
Nov. 18, 1977
Larry R Dawson, Albuquerque, NM (US);
Stephen Knight, Murray Hill, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
A symmetric double heterojunction transistor consisting of a lightly doped wide bandgap--heavily doped narrow bandgap--lightly doped wide bandgap structure with the wide bandgap materials having a conductivity type opposite to that of the narrow bandgap material is optically accessed, symmetric with respect to the polarity of applied bias across the transistor and has linear current-voltage characteristics through the origin. A preferred embodiment uses a nGa.sub.1-x Al.sub.x As-pGaAs-nGa.sub.1-x Al.sub.x As structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile