The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 1979
Filed:
Mar. 22, 1977
Abstract
In a semi-insulating gallium arsenide single crystal containing at least one of deep acceptor impurities and at least one of deep donor impurities and having a resistivity of at least about 10.sup.6 .OMEGA..multidot.cm at 300 .degree. K., (1) at least one of the deep donor impurities is oxygen, the oxygen concentration in the single crystal being at least about 4.times.10.sup.16 cm.sup.-3, while the silicon concentration in the single crystal being simultaneously at most about 2.times.10.sup.15 cm.sup.-3, (2) at least one of the deep acceptor impurities is chromium, the chromium concentration in the single crystal being within a range of about 3.times.10.sup.15 to about 3.times.10.sup.17 cm.sup.-3 and (3) at least one of tellurium, tin, selenium and sulfur is contained as another shallow donor impurity than silicon so to satisfy the relationship of N.sub.AA >N.sub.D -N.sub.A >-N.sub.DD wherein N.sub.AA represents the sum of concentrations of the deep acceptor impurities including chromium, N.sub.DD represents the sum of concentrations of the deep donor impurities including oxygen, N.sub.D represents the sum of concentrations of the shallow donor impurities including electrically active lattice defects and N.sub.A represents the sum of concentrations of the shallow acceptor impurities including electrically active lattice defects.