The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 1979

Filed:

Nov. 16, 1977
Applicant:
Inventors:

Jene A Golovchenko, Basking Ridge, NJ (US);

Thirumalai N Venkatesan, Highland Park, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148175 ; 2191 / ; 357 18 ; 357 91 ;
Abstract

Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.


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