The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 1979
Filed:
Oct. 03, 1977
Al F Tasch, Jr, Richardson, TX (US);
Horng-Sen Fu, Dallas, TX (US);
Pallab K Chatterjee, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device having a p-n junction characterized by low electric field crowding and a resulting high avalanche breakdown voltage requirement. The semiconductor device is comprised of a semiconductor substrate having impurity atoms of one type and a first surface. A first doped region lies in said substrate at said first surface and has dopant atoms of a type opposite to said one type. A second doped region lies in said substrate at said first surface adjacent the entire perimeter of said first doped region. The second doped region extends laterally away from said first doped region, and has dopant atoms of the same type as and of less density than said dopant atoms of said first doped region.