The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 1979
Filed:
May. 02, 1977
Gerard Cachier, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A method for manufacturing semiconductor devices and the devices so made, having two components with differing internal structures of very small dimension on a common heat-dissipating support, wherein the two components are obtained by suitable ion implants in two separate regions of a single block of silicon by alternately protecting each region with a mask. After welding the structure to a metallic support, a pair of diodes or mounds is relieved by ion machining or chemical etching. The assembly is then insulated and provided with the necessary power connections by the alternate application of insulating and conductive materials, the latter being separate metallic layers enabling the two components to be discretely biased.