The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 1979
Filed:
Mar. 25, 1977
Applicant:
Inventor:
Josuke Nakata, Itami, JP;
Assignee:
Mitsubishi Denki Kabuchiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 18 ; 357 22 ;
Abstract
A p type semiconductor gate layer is buried in an N type semiconductor cathode layer to encircle a channel through which the forward current of a luminescent PN junction passes. A reverse voltage is applied to the gate layer to spread a depletion layer in the channel to control the forward current and therefore the emission of light. The gate layer may be disposed on that surface of the cathode layer remote from the luminescent PN junction with a groove disposed the other surface of the cathode layer to narrow the channel.
Nakata, Josuke. (1979). Semiconductor controlled luminescent device (U.S. Patent No. 4152711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4152711
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile