The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 1979
Filed:
Jul. 06, 1976
Czeslaw Deminet, Kent, WA (US);
William E Horne, Bellevue, WA (US);
Richard E Oettel, Seattle, WA (US);
The Boeing Company, Seattle, WA (US);
Abstract
The process comprises the following steps: (1) forming a glass sheet which defines a substrate layer for the solar cell product; (2) forming a diffusion barrier layer on at least one surface of the substrate; (3) forming a first electrically-conductive layer on the diffusion barrier, the first electrically-conductive layer being a first electrode in the solar cell product; (4) depositing small-grain polycrystalline silicon in a thin film, i.e., 10-100 micrometers, on the first electrode layer; (5) recrystallizing, typically by heating, the deposited polycrystalline silicon until it reforms into large-grain polycrystalline or single-crystal silicon; (6) forming a PN junction in the recrystallized silicon layer; and (7) forming a second electrically-conductive layer on the recrystallized silicon layer, the second electrically-conductive layer being a second electrode in the solar cell product. The solar cell product produced by the above-process may be fabricated in large surface area configurations, suitable for terrestrial as well as extra-terrestrial use, at relatively low cost.