The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1979
Filed:
Aug. 28, 1978
Applicant:
Inventors:
Assignee:
Tokyo Shibaura Electric Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 65 ; 357 67 ; 357 68 ; 29589 ;
Abstract
A semiconductor device comprising electrode-lead layer units wherein at least one of said electrode-lead layer units or at least one portion of same of said units occupying certain positions in the semiconductor device is made thicker than the remainder, thereby enabling circuit elements to be integrated with a high density, namely, rendering the entire semiconductor device compact.
Quick Actions:
Kawagai, Kenji. (1979). Semiconductor device having electrode-lead layer units of differing (U.S. Patent No. 4151546). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4151546
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile