The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1979
Filed:
Apr. 13, 1978
Applicant:
Inventor:
Tatsuo Baba, Toyokawa, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330264 ; 330 65 ; 330277 ; 330289 ;
Abstract
A low frequency power amplifier uses MOS FET's each having a semiconductor device unit including a source electrode, a drain electrode and an insulated gate electrode filled in a can type casing with the source electrode being electrically connected to the can type casing. When the MOS FET having its source electrode connected to the can type casing is mounted on a heat sink and operated in a source follower configuration, a stray capacity between the can-shaped casing and the heat sink is connected in parallel with a load so that the amplifier oscillates. The heat sink is grounded through an impedance element and the stray capacity is isolated from the load to prevent the oscillation.