The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1979
Filed:
Apr. 19, 1977
Hendrik C De Graaff, Eindhoven, NL;
Paul A Hart, Eindhoven, NL;
Albert Schmitz, Eindhoven, NL;
Jan W Slotboom, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device having a transistor structure in which the emitter zone comprises a lower-doped region adjoining the base zone and a more highly-doped region adjoining the surface. According to the invention, the more highly-doped part is obtained by the introduction of doping atoms through an undoped polycrystalline layer provided on the surface. Preferably, a thin silicon nitride or silicon oxide layer is provided between the surface and the polycrystalline silicon layer prior to providing the latter.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile