The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 1979
Filed:
Jun. 09, 1978
Applicant:
Inventors:
Claus Weyrich, Gauting, DE;
Werner Hosp, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 118415 ;
Abstract
A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate-receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective substrates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate.