The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 1979
Filed:
Apr. 07, 1978
Applicant:
Inventors:
Cornelis M Hart, Eindhoven, NL;
Jan Lohstroh, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; HO1L / ;
U.S. Cl.
CPC ...
357 44 ; 148-15 ; 148175 ; 148187 ; 148188 ; 29571 ; 29579 ;
Abstract
A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit having very small complementary transistors. According to the invention two surface zones are provided beside each other without a masking tolerance of which one is formed by diffusion from a thin silicon layer. The distance between the surface zones is determined by the width of an oxide strip formed on the surface and on the edge of the silicon layer. The oxide strip is obtained by an underetching process and by using a silicon nitride mask deposited with shadow effect.