The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 1979
Filed:
Dec. 02, 1977
Applicant:
Inventors:
Bernard A MacIver, Lathrup Village, MI (US);
Eugene Greenstein, Southfield, MI (US);
Assignee:
General Motors Corporation, Detroit, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 20 ; 357 48 ; 357 59 ; 357 91 ;
Abstract
Low dosage phosphorus implantation regions in <100> P-type silicon are subjected to a severe damage implant with halogen or silicon ions, preferably fluorine and chlorine. This permits anneal in a strongly oxidizing atmosphere for PN junction passivation, without concurrently inducing PN junction leakage. Oxide passivated PN junctions are formed having leakages as low as when the low dose phosphorus implants are annealed in other atmospheres, or are formed in <111> silicon.