The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 1979
Filed:
Oct. 31, 1977
Applicant:
Inventors:
Harold D Edmonds, Hopewell Junction, NY (US);
Gary Markovits, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148 33 ; 148175 ; 156645 ;
Abstract
Gettered semiconductor wafers for integrated circuit device manufacture are prepared by grinding a layer of damage into the back face of the wafer to a depth of about 8-35 microns, heating the wafer to a temperature of about 800.degree.-1150.degree. C. for about 1 to 3 hours and quickly cooling the wafer to a temperature below about 600.degree. C., and polishing both sides of the wafer to form a polished, substantially damage-free front face and a smooth back face which has a residual layer of crystallographic damage to provide additional gettering during device manufacture.